IRG4BC20FDPBF

IRG4BC20FDPBF

  • Description:IGBT 600V 16A TO-220AB
  • Series:-

SKU:5f43954b532e Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 600V 16A TO-220AB
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):16 A
  • Current - Collector Pulsed (Icm):64 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 9A
  • Power - Max:60 W
  • Switching Energy:250µJ (on), 640µJ (off)
  • Input Type:Standard
  • Gate Charge:27 nC
  • Td (on/off) @ 25°C:43ns/240ns
  • Test Condition:480V, 9A, 50Ohm, 15V
  • Reverse Recovery Time (trr):37 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

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IRG4BC20FDPBF

Overview

The IRG4BC20FDPbF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 16 A at 25°C, with a pulsed current rating of 64 A. The device utilizes TRENCHSTOP™ technology for low conduction losses and fast switching characteristics. It is housed in a lead-free TO-220AB package designed for through-hole mounting.

Feature Summary

  • Incorporates TRENCHSTOP™ technology to achieve low on-state voltage drop and optimized switching performance.
  • Features an ultra-fast soft-recovery anti-parallel diode integrated within the package for efficient commutation.
  • Designed with high short-circuit capability and robust avalanche ruggedness for reliable operation under fault conditions.

Applications

  • Medium power motor drives
  • Switched-mode power supplies
  • High-frequency inverters

Procurement Notes

Verify component authenticity against official Infineon documentation before integration. Confirm that the specific ordering suffix matches the required lead-free and halogen-free specifications. Ensure thermal management designs account for the specified junction temperature limits and power dissipation ratings provided in the datasheet.

Selection Notes

Select this component for applications requiring a balance between low conduction loss and fast switching speed in the 600V range. Consider the TO-220AB package constraints for thermal resistance and board space. Evaluate gate drive requirements against the specified total gate charge to ensure adequate switching performance.

Part Context

This IGBT belongs to Infineon's BC series, which focuses on medium power applications. It represents a standard discrete solution compared to module-based alternatives, suitable for designs where individual component placement and cost-efficiency are prioritized over higher current densities.

Replacement Considerations

Public confirmed substitute part numbers: None available in verified sources.

FAQ

What type of recovery diode is integrated with this IGBT?

It features an ultra-fast soft-recovery anti-parallel diode designed to minimize reverse recovery losses and electromagnetic interference.

Is the IRG4BC20FDPbF RoHS compliant?

Yes, the Pb-free suffix indicates it is manufactured using lead-free processes and complies with RoHS standards.

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150°C.

IRG4BC20FDPBFIRG4BC20FDPBF

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