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The IRG4BC20FDPbF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 16 A at 25°C, with a pulsed current rating of 64 A. The device utilizes TRENCHSTOP™ technology for low conduction losses and fast switching characteristics. It is housed in a lead-free TO-220AB package designed for through-hole mounting.
Verify component authenticity against official Infineon documentation before integration. Confirm that the specific ordering suffix matches the required lead-free and halogen-free specifications. Ensure thermal management designs account for the specified junction temperature limits and power dissipation ratings provided in the datasheet.
Select this component for applications requiring a balance between low conduction loss and fast switching speed in the 600V range. Consider the TO-220AB package constraints for thermal resistance and board space. Evaluate gate drive requirements against the specified total gate charge to ensure adequate switching performance.
This IGBT belongs to Infineon's BC series, which focuses on medium power applications. It represents a standard discrete solution compared to module-based alternatives, suitable for designs where individual component placement and cost-efficiency are prioritized over higher current densities.
Public confirmed substitute part numbers: None available in verified sources.
It features an ultra-fast soft-recovery anti-parallel diode designed to minimize reverse recovery losses and electromagnetic interference.
Yes, the Pb-free suffix indicates it is manufactured using lead-free processes and complies with RoHS standards.
The maximum operating junction temperature is +150°C.