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The IRG4BC20FPbF is a fast-speed Insulated Gate Bipolar Transistor (IGBT) utilizing OptiMOS technology for medium switching frequencies. It features an n-channel configuration in a TO-220AB package with lead-free terminals. Key electrical parameters include a Collector-Emitter Breakdown Voltage of 600V, a maximum continuous collector current of 34A at 25°C, and a Collector-Emitter Saturation Voltage of 2.7V. The device supports a maximum power dissipation of 100W, operates within a junction temperature range of -55°C to +150°C, and includes an integrated anti-parallel diode.
Verify the component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm that the ordering suffix matches the required lead-free and package variant. Ensure the supplier provides valid traceability documentation to mitigate risks associated with counterfeit components.
Select this component when a 600V IGBT with high current capability is required for medium-frequency operations. Evaluate the thermal resistance characteristics to ensure adequate heat sinking for the specified power dissipation limits. Consider the integrated diode performance if synchronous rectification or freewheeling paths are necessary in the topology.
This discrete IGBT belongs to the BC series from Infineon Technologies, formerly International Rectifier. The series is engineered for robust performance in power conversion systems. The specific model integrates advanced semiconductor structures to balance conduction losses with switching efficiency.
IRG4BC20PBF