IRG4BC20KD-S

$2.85

Description：IGBT 600V 16A 60W D2PAK
Series：-

SKU:75631aeb2844 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 16A 60W D2PAK
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：16 A
Current - Collector Pulsed (Icm)：32 A
Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 9A
Power - Max：60 W
Switching Energy：340µJ (on), 300µJ (off)
Input Type：Standard
Gate Charge：34 nC
Td (on/off) @ 25°C：54ns/180ns
Test Condition：480V, 9A, 50Ohm, 15V
Reverse Recovery Time (trr)：37 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK
Grade：-
Qualification：-

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IRG4BC20KD-S

Overview

The IRG4BC20KD-S is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, formerly International Rectifier. It features an ultrafast soft-recovery anti-parallel diode co-packaged with the IGBT chip. The device is rated for a collector-emitter voltage of 600V and a continuous collector current of 20A. Typical saturation voltage is 2.27V at 15V gate drive and 9A collector current. It utilizes an industry-standard D2Pak package.

Feature Summary

Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations.
Co-packaged HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes optimized for bridge configurations.
Short circuit rated capability up to 10µs at 125°C and VGE = 15V.
Optimized for high operating frequencies exceeding 5.0 kHz.

Applications

High power density motor controls
Bridge configurations requiring integrated freewheeling diodes
High frequency switching applications

Procurement Notes

Verify component authenticity through authorized channels as this part originates from the International Rectifier lineage now under Infineon. Confirm package integrity and pinout compatibility with existing D2Pak footprints. Check for RoHS compliance status relative to specific manufacturing dates. Ensure storage conditions meet semiconductor handling standards to prevent moisture damage prior to soldering.

Selection Notes

Select this component when designing circuits requiring integrated fast recovery diodes in a compact form factor. The Generation 4 architecture offers improved efficiency over older discrete solutions. Evaluate thermal management requirements based on the D2Pak package limitations. Consider the short-circuit rating for robust protection schemes in motor drive or inverter topologies.

Part Context

This component belongs to the IRG4BC series of IGBTs with integrated diodes. It serves as a successor to earlier models like the IRGBC20KD2-S and IRGBC20MD2-S. The product represents Infineon's transition from International Rectifier technologies, maintaining standard packaging while enhancing switching performance and parameter consistency.

Replacement Considerations

Public documentation confirms this part replaces the IRGBC20KD2-S and IRGBC20MD2-S products. Verify pin compatibility and electrical specifications before substituting other similar IGBT-diode modules.