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Product Detailed Parameters
- Description：IGBT 600V 16A 60W D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：16 A
- Current - Collector Pulsed (Icm)：32 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 9A
- Power - Max：60 W
- Switching Energy：340µJ (on), 300µJ (off)
- Input Type：Standard
- Gate Charge：34 nC
- Td (on/off) @ 25°C：54ns/180ns
- Test Condition：480V, 9A, 50Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRG4BC20KD-SPBF is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features an ultrafast soft-recovery anti-parallel diode co-packaged with the IGBT in a D2PAK package. The device is rated for a collector-emitter voltage of 600V and supports short-circuit operation up to 10µs at 125°C with VGE = 15V. Designed for high operating frequencies exceeding 5.0 kHz, it offers tighter parameter distribution and higher efficiency compared to previous generations.
Feature Summary
- Generation 4 IGBT design providing tighter parameter distribution and higher efficiency
- Co-packaged HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for bridge configurations
- Short-circuit rated capability up to 10µs at 125°C and VGE = 15V
- Optimized for high operating frequencies greater than 5.0 kHz
Applications
- High power density motor controls
- Bridge configurations requiring integrated freewheeling diodes
- High frequency switching applications above 5.0 kHz
Procurement Notes
Verify component authenticity through authorized channels due to potential availability constraints. Confirm that the specific suffix matches the required lead-free and packaging specifications. Check current lifecycle status as older generation components may face obsolescence. Ensure thermal management designs account for the specified short-circuit ratings and junction temperature limits during procurement planning.
Selection Notes
Select this component when designing circuits requiring integrated fast recovery diodes within a standard D2PAK footprint. The Generation 4 technology is suitable for applications demanding improved efficiency over prior models. Consider the 600V rating and short-circuit robustness for protective circuit requirements. Evaluate thermal performance against the specified operating temperature range for the target environment.
Part Context
This part belongs to Infineon's Generation 4 IGBT family, which succeeded earlier products like the IRGBC20KD2-S and IRGBC20MD2-S. It integrates silicon IGBT technology with HEXFRED diodes to minimize switching losses and electromagnetic interference. The D2PAK package provides an industry-standard form factor for surface-mount assembly in power electronics modules.
Replacement Considerations
The datasheet explicitly states that this part replaces the IRGBC20KD2-S and IRGBC20MD2-S products. Verify pinout compatibility and electrical parameters when substituting these legacy parts. Ensure that the upgraded switching characteristics of the Generation 4 design are compatible with existing gate drive circuits.
