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Product Detailed Parameters
- Description：IGBT 600V 19A 60W D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：19 A
- Current - Collector Pulsed (Icm)：38 A
- Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 10A
- Power - Max：60 W
- Switching Energy：320µJ (on), 2.58mJ (off)
- Input Type：Standard
- Gate Charge：27 nC
- Td (on/off) @ 25°C：62ns/690ns
- Test Condition：480V, 10A, 50Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRG4BC20SD-S is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) co-packaged with an ultrafast soft recovery HEXFRED diode. It features a D2PAK surface-mount package and operates at a collector-to-emitter voltage of 600V. The device provides a continuous collector current of 19A at 25°C case temperature, reducing to 10A at 100°C. Maximum power dissipation is rated at 60W at 25°C and 24W at 100°C. The typical saturation voltage is 1.4V at 10A, and the total gate charge is typically 27nC.
Feature Summary
- Co-packaged IGBT with ultrafast soft-recovery anti-parallel diode for bridge configurations
- Optimized for low power dissipation in inverter drives up to 3kHz PWM frequency
- Tight Vce(on) distribution ensures consistent performance across devices
Applications
- Inverter drives operating up to 3kHz PWM frequency
- Brushless DC motor drives operating up to 4kHz
- Bridge configurations requiring minimized snubbing
Procurement Notes
Verify the specific suffix 'S' corresponds to the D2PAK surface-mount package variant rather than through-hole versions. Confirm lead-free status and Generation 4 technology specifications against the official datasheet before integration. Ensure thermal management aligns with the specified junction-to-case resistance values.
Selection Notes
Select this component for applications requiring high efficiency and low switching losses in medium-power inverters. The integrated ultrafast diode reduces external component count and simplifies layout. Evaluate thermal requirements carefully as power dissipation drops significantly at elevated case temperatures.
Part Context
This part belongs to Infineon's Generation 4 IGBT family, designed for optimized performance in specific application conditions. It utilizes silicon technology and is housed in an industry-standard D2PAK package. The product line emphasizes high efficiencies and lower conduction losses compared to standard MOSFETs.
Replacement Considerations
IRG4BC20FD
FAQ
What is the maximum clamped inductive load current?
The maximum clamped inductive load current (ILM) is 38A.
Does the device include an integrated freewheeling diode?
Yes, it is co-packaged with a HEXFRED ultrafast, ultra-soft-recovery anti-parallel diode.
What is the internal emitter inductance value?
The internal emitter inductance is typically 7.5nH, measured 5mm from the package.
