IRG4BC20SPBFXKMA1

IRG4BC20SPBFXKMA1

  • Description:IGBT 600V 19A TO-220AB
  • Series:-

SKU:c9888885347e Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 600V 19A TO-220AB
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):19 A
  • Current - Collector Pulsed (Icm):38 A
  • Vce(on) (Max) @ Vge, Ic:1.6V @ 15V, 10A
  • Power - Max:60 W
  • Switching Energy:120µJ (on), 2.05mJ (off)
  • Input Type:Standard
  • Gate Charge:27 nC
  • Td (on/off) @ 25°C:27ns/540ns
  • Test Condition:480V, 10A, 50Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

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IRG4BC20SPBFXKMA1

Overview

The IRG4BC20SPBFXKMA1 is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features an ultrafast soft-recovery anti-parallel diode co-packaged with the IGBT chip, designed for high-frequency operation exceeding 5.0 kHz. The device is rated for a collector-emitter breakdown voltage of 600 V and supports short-circuit withstand capabilities up to 10 µs at 125°C with a gate-emitter voltage of 15 V. This component utilizes industry-standard packaging to facilitate efficient thermal management in bridge configurations.

Feature Summary

  • Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations.
  • Co-packaged HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes optimized for performance with the IGBT.
  • Short-circuit rated capability ensuring robustness under fault conditions at elevated temperatures.

Applications

  • High power density motor controls
  • Bridge configurations requiring integrated freewheeling diodes
  • High operating frequency applications above 5.0 kHz

Procurement Notes

Verify the specific suffix 'XKMA1' against official Infineon documentation to confirm exact tape-and-reel specifications or marking variations. Confirm RoHS compliance status as legacy datasheets may reference different environmental declarations. Ensure the source document explicitly lists this full part number to avoid confusion with similar standard packages.

Selection Notes

Select this component when designing circuits that require both high switching speed and integrated freewheeling functionality within a single package. The Generation 4 technology offers improved efficiency over older models. Consider the 600V rating and short-circuit tolerance when sizing protection mechanisms for industrial motor drives or inverters.

Part Context

This part belongs to the IRG4BC series of Generation 4 IGBTs from Infineon (formerly International Rectifier). These devices are engineered to replace earlier products like the IRGBC20KD2-S. The series focuses on minimizing switching losses and EMI through optimized diode recovery characteristics while maintaining high power density.

Replacement Considerations

Public confirmed substitute part numbers: IRGBC20KD2-S, IRGBC20MD2-S.

IRG4BC20SPBFXKMA1IRG4BC20SPBFXKMA1

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