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The IRG4BC20UD-S is a Generation 4 Insulated Gate Bipolar Transistor with an UltraFast Soft Recovery Diode. It features a VCES of 600V and a continuous collector current (IC) of 13A at TC=25°C, or 6.5A at TC=100°C. The device utilizes a D2Pak package with a maximum power dissipation of 60W at 25°C. It includes an integrated HEXFRED ultrafast diode with a reverse recovery time (trr) of 37ns at TJ=25°C.
Verify the specific suffix against official documentation to confirm exact electrical characteristics and packaging type. Confirm RoHS compliance status and lead times directly with authorized distributors or Infineon Technologies before procurement.
Select this component for designs requiring high efficiency and optimized switching performance. Ensure thermal management supports the specified junction temperature range and power dissipation limits under expected load conditions.
This part belongs to the IRG4BC series of ultrafast CoPack IGBTs from Infineon Technologies. It represents a transition from International Rectifier products following corporate acquisitions, maintaining industry-standard pinouts and specifications.
Designed as a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs. Verify pin compatibility and thermal resistance requirements when substituting older models.
The typical turn-on delay time (td(on)) is 39 ns at TJ = 25°C.
The clamped inductive load current (ILM) is rated at 52 A.
The internal emitter inductance (LE) is typically 7.5 nH, measured 5mm from the package.