IRG4BC20UD-S

IRG4BC20UD-S

$1.11
  • Description:IGBT 600V 13A 60W D2PAK
  • Series:-

SKU:9f1422429a94 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 600V 13A 60W D2PAK
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):13 A
  • Current - Collector Pulsed (Icm):52 A
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 6.5A
  • Power - Max:60 W
  • Switching Energy:160µJ (on), 130µJ (off)
  • Input Type:Standard
  • Gate Charge:27 nC
  • Td (on/off) @ 25°C:39ns/93ns
  • Test Condition:480V, 6.5A, 50Ohm, 15V
  • Reverse Recovery Time (trr):37 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D2PAK
  • Grade:-
  • Qualification:-

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IRG4BC20UD-S

Overview

The IRG4BC20UD-S is a Generation 4 Insulated Gate Bipolar Transistor with an UltraFast Soft Recovery Diode. It features a VCES of 600V and a continuous collector current (IC) of 13A at TC=25°C, or 6.5A at TC=100°C. The device utilizes a D2Pak package with a maximum power dissipation of 60W at 25°C. It includes an integrated HEXFRED ultrafast diode with a reverse recovery time (trr) of 37ns at TJ=25°C.

Feature Summary

  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generations.
  • Co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for bridge configurations.
  • Optimized for high operating frequencies in hard switching and resonant modes.

Applications

  • High-frequency hard switching applications
  • Resonant mode power conversion
  • Bridge configurations requiring soft recovery diodes

Procurement Notes

Verify the specific suffix against official documentation to confirm exact electrical characteristics and packaging type. Confirm RoHS compliance status and lead times directly with authorized distributors or Infineon Technologies before procurement.

Selection Notes

Select this component for designs requiring high efficiency and optimized switching performance. Ensure thermal management supports the specified junction temperature range and power dissipation limits under expected load conditions.

Part Context

This part belongs to the IRG4BC series of ultrafast CoPack IGBTs from Infineon Technologies. It represents a transition from International Rectifier products following corporate acquisitions, maintaining industry-standard pinouts and specifications.

Replacement Considerations

Designed as a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs. Verify pin compatibility and thermal resistance requirements when substituting older models.

FAQ

What is the typical turn-on delay time?

The typical turn-on delay time (td(on)) is 39 ns at TJ = 25°C.

What is the clamped inductive load current rating?

The clamped inductive load current (ILM) is rated at 52 A.

What is the internal emitter inductance value?

The internal emitter inductance (LE) is typically 7.5 nH, measured 5mm from the package.

IRG4BC20UD-SIRG4BC20UD-S
$1.11
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