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Product Detailed Parameters
- Description：IGBT 600V 13A 60W D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：13 A
- Current - Collector Pulsed (Icm)：52 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 6.5A
- Power - Max：60 W
- Switching Energy：160µJ (on), 130µJ (off)
- Input Type：Standard
- Gate Charge：27 nC
- Td (on/off) @ 25°C：39ns/93ns
- Test Condition：480V, 6.5A, 50Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRG4BC20UD-SPBF is a silicon Insulated Gate Bipolar Transistor manufactured by Infineon Technologies. It features a DPAK-3 (TO-252-3) surface-mount package and operates with a collector-emitter voltage of 600 V. The device supports a continuous collector current of 14 A at 25°C and handles up to 11 A under specific thermal conditions, with a power dissipation rating of 49 W. It exhibits a collector-emitter saturation voltage of 1.95 V and functions within a temperature range of -55°C to +150°C.
Feature Summary
- UltraFast switching performance optimized for high-frequency hard switching applications
- Generation 4 IGBT design providing tighter parameter distribution and higher efficiency
- Single configuration suitable for compact surface-mount circuit designs
Applications
- High-frequency inverter circuits operating between 10 kHz and 30 kHz
- Switch-mode power supplies requiring fast switching characteristics
- Industrial motor drive systems utilizing discrete IGBT topology
Procurement Notes
Verify the exact suffix designation against official Infineon documentation, as variations such as SPBF or UD may indicate distinct electrical or packaging specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet. Ensure the component matches the required DPAK-3 footprint and pinout for your PCB layout before finalizing procurement orders.
Selection Notes
Select this component when a 600 V rated IGBT with UltraFast switching capabilities is required in a surface-mount form factor. Compare the 1.95 V saturation voltage and 14 A current rating against system load requirements. Consider the TO-252-3 package constraints for thermal management and ensure the gate drive circuitry aligns with the specified maximum gate-emitter voltage limits.
Part Context
This part belongs to Infineon’s Generation 4 IGBT family, designed to improve efficiency over previous iterations. The UltraFast variant specifically targets applications demanding reduced switching losses at frequencies exceeding standard IGBT capabilities. It complements other discrete power devices in single-phase and three-phase converter topologies.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing designs by cross-referencing pinouts and electrical parameters with alternative 600 V UltraFast IGBTs from the same manufacturer.
