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Product Detailed Parameters
- Description：IGBT 600V 13A 60W D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：13 A
- Current - Collector Pulsed (Icm)：52 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 6.5A
- Power - Max：60 W
- Switching Energy：160µJ (on), 130µJ (off)
- Input Type：Standard
- Gate Charge：27 nC
- Td (on/off) @ 25°C：39ns/93ns
- Test Condition：480V, 6.5A, 50Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRG4BC20UD-STRL is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) with an integrated UltraFast Soft Recovery Diode, manufactured by Infineon Technologies. It features a VCES of 600V and a continuous collector current (IC) of 13A at TC=25°C. The device utilizes the D2Pak package for industry-standard mounting. Key electrical parameters include a typical VCE(on) of 1.85V at VGE=15V and IC=6.5A, and a maximum power dissipation of 60W at 25°C case temperature. The integrated diode supports a continuous forward current of 7.0A at 100°C.
Feature Summary
- Co-packaged HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes designed for bridge configurations
- Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations
- Optimized for high operating frequencies in hard switching and resonant mode applications
Applications
- High-frequency hard switching power supplies
- Resonant mode power conversion circuits
- Bridge configurations requiring integrated freewheeling diodes
Procurement Notes
Verify the specific ordering suffix 'STRL' against official Infineon documentation to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status as indicated in the datasheet header. Ensure the component matches the D2Pak footprint dimensions provided in the mechanical drawings before integration into PCB layouts.
Selection Notes
Select this component for designs requiring a 600V rating with moderate current handling up to 13A. Consider the thermal resistance values and power dissipation limits relative to the expected junction temperature range of -55°C to +150°C. Evaluate the switching loss characteristics against the required operating frequency to ensure efficient performance within the specified gate drive conditions.
Part Context
This part belongs to the IRG4BC series of UltraFast CoPack IGBTs from Infineon Technologies. It represents a discrete power semiconductor solution combining an N-channel IGBT with a complementary diode in a single TO-220AB-compatible D2Pak package. The series is engineered for industrial market applications demanding high efficiency and reliable switching performance.
Replacement Considerations
The datasheet indicates the device is designed as a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs. Verify pinout compatibility and thermal interface requirements when substituting older generation parts.
