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Product Detailed Parameters
- Description：IGBT 600V 13A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：13 A
- Current - Collector Pulsed (Icm)：52 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 6.5A
- Power - Max：60 W
- Switching Energy：100µJ (on), 120µJ (off)
- Input Type：Standard
- Gate Charge：27 nC
- Td (on/off) @ 25°C：21ns/86ns
- Test Condition：480V, 6.5A, 50Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRG4BC20UPBF is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a 600V collector-emitter breakdown voltage and a continuous collector current of 20A at 25°C. The device utilizes an UltraFast design optimized for high-frequency hard switching applications between 8kHz and 40kHz. Key electrical parameters include a maximum power dissipation of 130W, a typical saturation voltage of 1.72V at 15V gate drive and 20A collector current, and a package type of TO-220AB with flange mount installation.
Feature Summary
- Generation 4 IGBT architecture providing tighter parameter distribution and higher efficiency compared to previous generations.
- UltraFast switching characteristics optimized for high operating frequencies in hard switching environments.
- Industry-standard TO-220AB flange mount package facilitating thermal management and mechanical integration.
Applications
- High-frequency AC/DC converters
- Motor control drives
- Uninterruptible Power Supplies (UPS)
- Switching mode power supplies
Procurement Notes
Verify the specific suffix 'PBF' indicates lead-free compliance when sourcing replacements. Confirm that the component status remains End-of-Life or Obsolete as per manufacturer notifications. Ensure the replacement part matches the exact pinout and thermal resistance specifications required for the existing heatsink interface. Check RoHS directive compliance requirements against local regulatory standards before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring moderate current handling with fast switching speeds. The 600V rating suits general-purpose industrial and consumer power electronics. Consider the thermal performance within the TO-220AB package limits during high-duty cycle operations. Evaluate the gate charge requirements against the available driver capability to ensure optimal switching transitions without excessive losses.
Part Context
This device belongs to Infineon's UltraFast series of Generation 4 IGBTs. It is designed to replace older Generation 3 devices while offering improved efficiency and parameter consistency. The product line targets applications where switching frequency and conduction losses are critical design constraints. It complements other components in the same voltage class for complete power stage solutions.
Replacement Considerations
Direct substitutes include IRG4BC20FD and IRG4BC20U. Verify that alternative parts maintain identical pin configurations and thermal characteristics. Ensure any replacement also meets the UltraFast switching profile if high-frequency operation is required. Cross-reference datasheets for minor variations in saturation voltage or gate threshold values.
