SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRG4BC20W-S is a single IGBT from Infineon Technologies, designed for high-frequency switching applications. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current of 13 A at 25°C. The device operates within a junction temperature range of -55°C to 150°C and is housed in a TO-220AB through-hole package. Key electrical parameters include a collector-emitter saturation voltage of 2.6 V at 15 V gate drive and 6.5 A collector current, a gate charge of 26 nC, and switching energies of 60 µJ (turn-on) and 80 µJ (turn-off). Maximum power dissipation is rated at 60 W.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm that the part number suffix matches the exact variant required for your circuit design. Ensure storage conditions comply with moisture sensitivity level requirements prior to soldering. Cross-reference ordering information directly with authorized distributors to avoid counterfeit components.
Select this component when a 600 V blocking capability and 13 A continuous current are required in a standard through-hole package. Consider the specific saturation voltage and switching energy values for efficiency calculations. Evaluate thermal management solutions based on the 60 W power dissipation limit and ambient operating conditions.
This discrete IGBT belongs to the BC series, which focuses on optimized switching performance for medium-power applications. The TO-220AB package provides reliable mechanical mounting and thermal conduction for board-level implementations. It serves as a fundamental building block for power conversion stages requiring robust voltage handling.
Direct substitutes may include other 600 V, 13 A IGBTs in TO-220 packages from the same family or competitors. Verify pinout compatibility and ensure equivalent switching speeds and thermal resistance characteristics before implementation.