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The IRG4BC20WPBF is a discrete Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a 600V collector-emitter voltage rating and a continuous collector current of 13A. The device supports a pulsed collector current of 52A and dissipates up to 60W of power. Designed for high-frequency operation, it operates within the 60-150 kHz range using WARP technology. The component is housed in a TO-220AB package with three pins and a tab, suitable for through-hole mounting.
Verify the specific datasheet version provided by the supplier to ensure compatibility with your circuit design requirements. Confirm that the TO-220AB package dimensions match your PCB footprint and thermal interface specifications. Check for any ordering suffix variations that may indicate different testing or packaging standards, although the base part number remains consistent across official documentation.
Select this IGBT when designing circuits requiring 600V blocking capability and moderate current handling up to 13A. Consider its suitability for applications operating between 60-150 kHz where WARP technology offers efficiency benefits. Ensure the thermal resistance of the TO-220AB package aligns with your heat sinking strategy for 60W dissipation scenarios.
This component belongs to Infineon's WARP series of IGBTs, which are engineered for high-efficiency switching applications. The IRG4BC20WPBF represents a discrete solution within this family, offering a balance between voltage rating and current capacity. It is commonly used in medium-power industrial electronics where reliable switching at higher frequencies is required.
Public confirmed substitute part numbers include IRF-IRG4BC20WPBF as indicated in related datasheet references. Verify pinout and electrical parameters against the original specification before substitution.