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Product Detailed Parameters
- Description：IGBT 600V 31A 100W D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：31 A
- Current - Collector Pulsed (Icm)：124 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 17A
- Power - Max：100 W
- Switching Energy：630µJ (on), 1.39mJ (off)
- Input Type：Standard
- Gate Charge：51 nC
- Td (on/off) @ 25°C：42ns/230ns
- Test Condition：480V, 17A, 23Ohm, 15V
- Reverse Recovery Time (trr)：42 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRG4BC30FD-SPBF is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes Silicon technology and features a TO-220-3 through-hole package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 30 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.84 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 100 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations.
- Optimized for high operating frequencies in hard switching applications up to 40 kHz.
- Standard input configuration compatible with standard gate drive circuits.
Applications
- High-frequency motor drives
- Switch-mode power supplies
- Induction heating systems
Procurement Notes
Verify the exact suffix against official Infineon documentation, as variations like SPBF indicate specific packaging or compliance standards. Confirm availability status, as this component may be subject to discontinuation notices. Ensure the procurement channel provides valid traceability and authenticity guarantees for discrete semiconductors.
Selection Notes
Select this component when a 600V, 30A IGBT is required for hard-switching applications up to 40 kHz. The TO-220-3 package suits through-hole mounting requirements. Compare the 1.84 V saturation voltage and 100 W power dissipation against thermal management capabilities in the target design to ensure reliable operation within the specified temperature range.
Part Context
This part belongs to the IRG4BC series of Generation 4 IGBTs from Infineon. These devices are engineered for improved efficiency and robust performance in medium-power switching applications. The series typically includes variants with different current ratings and package options to accommodate diverse design constraints while maintaining standardized electrical characteristics.
Replacement Considerations
Publicly confirmed substitute part numbers for IRG4BC30FD-SPBF were not identified in the provided source material. Cross-referencing with other 600V 30A TO-220-3 IGBTs requires detailed parameter matching beyond generic family similarities.
