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Product Detailed Parameters
- Description：IGBT 600V 31A TO-220AB
- Series：-
- Mfr：International Rectifier
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：31 A
- Current - Collector Pulsed (Icm)：124 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 17A
- Power - Max：100 W
- Switching Energy：370µJ (on), 1.42mJ (off)
- Input Type：Standard
- Gate Charge：57 nC
- Td (on/off) @ 25°C：22ns/250ns
- Test Condition：480V, 17A, 23Ohm, 15V
- Reverse Recovery Time (trr)：46 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRG4BC30FD1PBF is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, formerly International Rectifier. It features a TO-263 package and operates with a maximum collector-emitter voltage of 600 V. The device supports a continuous collector current of 30 A at 25°C and handles up to 90 W of power dissipation. Key electrical parameters include a saturation voltage of 1.84 V and a gate-emitter voltage range of -20 V to +20 V. Operating temperatures span from -55°C to +150°C.
Feature Summary
- Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations.
- Optimized for high operating frequencies in hard switching applications up to 40 kHz.
- High short-circuit rating capability suitable for robust motor control environments.
Applications
- Motor control systems
- Switch-mode power supplies
- DC-AC inverters
Procurement Notes
Verify the manufacturer designation carefully, as the component is currently produced under Infineon Technologies rather than International Rectifier. Confirm the specific suffix FD1PBF corresponds to the required TO-263 packaging and lead-free compliance status before procurement. Ensure compatibility with existing thermal management designs given the 90 W dissipation rating.
Selection Notes
Select this component for applications requiring high power density and efficient switching in the 600 V range. The Generation 4 technology offers improved efficiency over older models like the IRGBC30K. Consider the thermal resistance of the TO-263 package when designing heat sinks for continuous operation near the 30 A limit.
Part Context
This device belongs to the IRG4BCxx series of Generation 4 IGBTs. It serves as an evolution of earlier International Rectifier products, specifically replacing parts such as the IRGBC30K and IRGBC30M. The transition from International Rectifier to Infineon Technologies marks the continuation of this product line under new corporate ownership while maintaining technical specifications.
Replacement Considerations
Official documentation indicates that the IRG4BC30FD1PBF replaces the IRGBC30K and IRGBC30M devices. Engineers transitioning from these legacy components should verify pinout compatibility and thermal characteristics. No other direct cross-model substitutes are explicitly listed in the provided public data.
