IRG4BC30FDPBF

Description：IGBT 600V 31A TO-220AB
Series：-

SKU:2f708ca9257e Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 31A TO-220AB
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：31 A
Current - Collector Pulsed (Icm)：124 A
Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 17A
Power - Max：100 W
Switching Energy：630µJ (on), 1.39mJ (off)
Input Type：Standard
Gate Charge：51 nC
Td (on/off) @ 25°C：42ns/230ns
Test Condition：480V, 17A, 23Ohm, 15V
Reverse Recovery Time (trr)：42 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220AB
Grade：-
Qualification：-

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IRG4BC30FDPBF

Overview

The IRG4BC30FDPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes silicon technology and features a TO-220-3 surface-mount package designed for through-hole installation. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 34 A at 25 °C. Key electrical parameters include a collector-emitter saturation voltage of 1.84 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 100 W. It operates within a temperature range of -55 °C to +150 °C.

Feature Summary

Single IGBT configuration with standard switching characteristics
Through-hole mounting in a TO-220-3 package
Silicon-based semiconductor technology

Applications

General purpose DC-DC converters
Motor drive circuits
Inverter applications

Procurement Notes

Verify the specific suffix 'FDPBF' against official Infineon documentation to confirm exact packaging and compliance details. Confirm availability status as distribution data may vary. Ensure the component meets required RoHS standards for the target application. Cross-reference datasheet revisions to validate parameter consistency before integration into designs.

Selection Notes

Select this component for applications requiring 600 V blocking capability and moderate current handling up to 34 A. The TO-220-3 package facilitates thermal management via heatsink mounting. Evaluate the 1.84 V saturation voltage for conduction loss requirements. Consider the operating temperature range limits for high-temperature environments.

Part Context

This part belongs to the Infineon IGBT transistor family, specifically designed for general-purpose power switching. It represents a standard discrete solution for medium-power electronics. The product line focuses on reliable performance in industrial and consumer power supplies.

Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Generic equivalents may not match the specific TO-220-3 footprint or electrical tolerances.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.