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Product Detailed Parameters
- Description：IGBT 600V 31A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：31 A
- Current - Collector Pulsed (Icm)：124 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 17A
- Power - Max：100 W
- Switching Energy：230µJ (on), 1.18mJ (off)
- Input Type：Standard
- Gate Charge：51 nC
- Td (on/off) @ 25°C：21ns/200ns
- Test Condition：480V, 17A, 23Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRG4BC30FPbF is a lead-free, insulated gate bipolar transistor (IGBT) in a TO-220AB package. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current of 31 A at 25°C. The device has a maximum power dissipation of 100 W and a typical on-state collector-emitter voltage of 1.57 V at 17 A. Switching characteristics include a turn-on delay time of 21 ns and a fall time of 13 ns. Total gate charge is 51 nC.
Feature Summary
- Optimized for medium frequency applications with tight parameter distribution
- Designed for high efficiency motor controls and industrial standard gate drivers
- Features low switching losses including reduced tail current
Applications
- Motor control systems
- High efficiency power supplies
- Industrial welding equipment
Procurement Notes
Verify the component matches the exact part number IRG4BC30FPbF to ensure correct specifications. Confirm the package type is TO-220AB and that the device is lead-free as indicated by the PbF suffix. Cross-reference the manufacturer datasheet for accurate electrical parameters before integration into designs.
Selection Notes
Select this IGBT for applications requiring robust performance in medium frequency environments. Consider its optimized design for high efficiency motor controls when evaluating power density requirements. Ensure compatibility with standard gate driver circuits and verify thermal management capabilities for the intended operating conditions.
Part Context
This component belongs to the Generation 2 IGBT series from Infineon Technologies. It represents an evolution in IGBT technology designed to provide tighter parameter distribution and higher efficiency compared to previous generations. The device is suitable for demanding industrial applications where reliability and performance are critical.
Replacement Considerations
The IRG4BC30FPbF replaces the IRGBC30K and IRGBC30M devices. When substituting, verify that the replacement meets the same voltage, current, and thermal specifications to ensure system compatibility.
