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Product Detailed Parameters
- Description：IGBT 600V 28A 100W D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：28 A
- Current - Collector Pulsed (Icm)：58 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 16A
- Power - Max：100 W
- Switching Energy：600µJ (on), 580µJ (off)
- Input Type：Standard
- Gate Charge：67 nC
- Td (on/off) @ 25°C：60ns/160ns
- Test Condition：480V, 16A, 23Ohm, 15V
- Reverse Recovery Time (trr)：42 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRG4BC30KD-STRR is a surface-mount Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 17 A. The device supports a peak pulsed collector current of 120 A and has a maximum power dissipation of 100 W. Typical on-state voltage is 2.21 V at 15 V gate drive and 16 A collector current. Switching characteristics include a turn-on delay of 21 ns and turn-off delay of 200 ns under specific test conditions. The component is housed in a D2PAK package.
Feature Summary
- Co-packaged with HEXFRED ultrafast, ultrasoft recovery antiparallel diodes to minimize recovery characteristics, reducing noise, EMI, and switching losses.
- High short circuit rating optimized for motor control applications, supporting a duration of 10 µs at 360 V collector-emitter voltage start and 125°C junction temperature.
- Combines low conduction losses with high switching speed, offering tighter parameter distribution and higher efficiency compared to previous generations.
Applications
- Motor control systems
- Switched-mode power supplies
- High-efficiency power conversion circuits
Procurement Notes
Verify the complete part number including the suffix STRR to confirm tape-and-reel packaging configuration. Ensure compatibility with standard D2PAK footprint dimensions during PCB layout. Confirm that the design accounts for the specified short-circuit withstand time of 10 µs when implementing protection logic. Validate thermal management requirements against the 100 W maximum power dissipation limit under expected operating conditions.
Selection Notes
Select this component for designs requiring robust short-circuit immunity in motor drive applications. The integrated HEXFRED diode eliminates the need for external fast-recovery diodes, simplifying the bill of materials. Consider the 600 V blocking capability for medium-voltage AC-DC or DC-AC topologies. Evaluate the trade-off between the 2.21 V typical saturation voltage and switching speeds for overall system efficiency optimization.
Part Context
This IGBT belongs to the fourth-generation CoolMOS family from International Rectifier, now part of Infineon Technologies. It serves as a successor to the IRGBC30KD2 and IRGBC30MD2 products. The device represents an evolution in discrete power semiconductors designed to enhance power density in industrial and consumer electronics through improved switching performance and reduced parasitic effects.
Replacement Considerations
Public documentation confirms this part replaces the IRGBC30KD2 and IRGBC30MD2. Verify pinout compatibility and thermal resistance values before substitution. Ensure that any alternative components meet the same 10 µs short-circuit rating requirement for direct replacement in existing motor control designs.
