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Product Detailed Parameters
- Description：IGBT 600V 28A 100W D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：28 A
- Current - Collector Pulsed (Icm)：56 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 16A
- Power - Max：100 W
- Switching Energy：600µJ (on), 580µJ (off)
- Input Type：Standard
- Gate Charge：67 nC
- Td (on/off) @ 25°C：60ns/160ns
- Test Condition：480V, 16A, 23Ohm, 15V
- Reverse Recovery Time (trr)：42 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRG4BC30KDSTRLP is an Insulated Gate Bipolar Transistor (IGBT) with a built-in ultrafast soft recovery diode, manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 17 A. The device supports a pulsed collector current of 120 A and has a maximum power dissipation of 100 W. Typical saturation voltage is 2.21 V at 15 V gate drive and 16 A collector current. Switching times are characterized by a turn-on delay of 21 ns and turn-off delay of 200 ns under specific test conditions.
Feature Summary
- Co-packaged HEXFRED ultrafast, ultrasoft recovery antiparallel diode minimizes reverse recovery noise, EMI, and switching losses.
- High short-circuit rating optimized for motor control applications, supporting a duration of 10 µs.
- Combines low conduction losses with high switching speed for improved efficiency compared to previous generations.
Applications
- Motor control systems
- Power conversion circuits requiring integrated freewheeling
- Industrial inverter designs
Procurement Notes
Verify the exact suffix against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the required thermal characteristics and pinout configuration for your specific PCB layout. Cross-reference the manufacturer's latest datasheet to confirm compliance with current environmental standards and availability status before finalizing procurement plans.
Selection Notes
Select this component when designing circuits that require both fast IGBT switching and efficient freewheeling capabilities in a single package. The integrated HEXFRED diode reduces system complexity and improves overall efficiency. Consider the 10 µs short-circuit withstand capability if the application demands robust protection against fault conditions without immediate shutdown.
Part Context
This part belongs to the fourth-generation IGBT family from Infineon, designed to offer higher power density. It serves as a successor to older models like the IRGBC30KD2 and IRGBC30MD2. The D²PAK surface-mount package facilitates automated assembly and compact design integration in modern power electronics.
Replacement Considerations
Publicly confirmed substitutes include IRG4BC30KD-STRR and IRG4BC30KD-S. These variants share identical electrical characteristics and functionality, differing primarily in packaging or reel specifications. Verify pin compatibility and thermal resistance values when substituting.
