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The IRG4BC30SPbF is a Generation 2 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a standard switching profile with a collector-emitter breakdown voltage of 600 V and a continuous collector current of 34 A at 25 °C. The device utilizes the industry-standard TO-220AB package for through-hole mounting. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.84 V at 51 A, a gate threshold voltage ranging from 3.6 V to 5.4 V, and a total gate charge of 57.24 nC. It supports a maximum power dissipation of 100 W and operates within a junction temperature range of -55 °C to +150 °C.
Verify the specific ordering suffix against official documentation to confirm lead-free status and RoHS compliance. Confirm that the component matches the exact part number required for your circuit design, as variations exist within the product family. Ensure the supplier provides valid traceability documents and original manufacturer certification to guarantee authenticity.
Select this component when designing circuits requiring a standard switching IGBT optimized for low-frequency operation below 1 kHz. The TO-220AB package facilitates easy integration into through-hole PCB layouts or heatsink assemblies. Consider the thermal impedance characteristics and the specific saturation voltage requirements for your load conditions to ensure optimal performance.
This discrete IGBT belongs to the IRG4BC series, which represents Infineon's Generation 2 technology. The series is engineered to deliver improved efficiency and tighter parameter distributions over earlier models. It serves as a fundamental building block for power conversion systems where reliable switching and manageable conduction losses are critical.
IRG4BC30S