SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRG4BC30SPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. It features a maximum collector-emitter voltage (Vces) of 600 V and a continuous collector current (Ic) of 17 A at 25°C. The device exhibits a typical saturation voltage (Vce(on)) of 1.59 V at Vge=15V and Ic=17A. It is housed in a D2PAK surface-mount package with an internal ultrafast soft recovery diode. The component supports a short-circuit rating of 10 µs and operates within a junction temperature range up to 150°C.
Verify the manufacturer designation carefully, as International Rectifier was acquired by Infineon Technologies. Ensure the datasheet corresponds to the specific suffix SPBF, which indicates lead-free packaging compliant with RoHS standards. Confirm the package type matches the required PCB footprint, typically D2PAK or TO-263 variants for this series.
Select this component when a 600 V IGBT with integrated fast recovery diode is required for medium-power applications. The 17 A continuous current rating suits moderate load requirements. Consider the 1.59 V Vce(on) for thermal management efficiency. Verify that the 10 µs short-circuit withstand capability aligns with the protection circuitry design of the target application.
This device belongs to the IRG4BC30 family of IGBTs from International Rectifier. It serves as a successor to earlier models like the IRGBC30K and IRGBC30M, offering tighter parameter distribution and higher efficiency. The product line emphasizes high power density for modern motor control designs.
Official documentation states this part replaces the IRGBC30K and IRGBC30M devices. When substituting, verify pin compatibility and thermal characteristics. Cross-referencing with Infineon's current portfolio may reveal updated equivalents with improved specifications or packaging options.