ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 23A 100W D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：23 A
- Current - Collector Pulsed (Icm)：92 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 12A
- Power - Max：100 W
- Switching Energy：130µJ (on), 130µJ (off)
- Input Type：Standard
- Gate Charge：51 nC
- Td (on/off) @ 25°C：25ns/99ns
- Test Condition：480V, 12A, 23Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
Download product information
Overview
The IRG4BC30W-SPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-to-emitter breakdown voltage of 600 V and a continuous collector current rating of 23 A at a case temperature of 25°C, decreasing to 12 A at 100°C. The device supports a pulsed collector current of 92 A and operates within a junction temperature range of -55°C to +150°C. Maximum power dissipation is rated at 100 W at 25°C case temperature, dropping to 42 W at 100°C. The component utilizes a D2PAK surface-mount package with a thermal resistance from junction to case of 1.2 °C/W.
Feature Summary
- Designed specifically for Switch-Mode Power Supply and PFC applications
- Industry-benchmark switching losses improve efficiency in all power supply topologies
- Latest-generation IGBT design offers tighter parameter distribution and exceptional reliability
Applications
- Switch-Mode Power Supplies
- Power Factor Correction (PFC)
- Single-ended converters
- Boost PFC topologies 150W and higher
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and lead-free status. Confirm that the manufacturer designation aligns with current Infineon product lines, as historical naming conventions may vary. Ensure the component meets RoHS compliance requirements for your assembly process. Cross-reference the datasheet revision date to validate electrical characteristics against your design specifications.
Selection Notes
Select this component for designs requiring high efficiency in hard-switched modes up to 150 kHz or resonant mode switching above 300 kHz. Consider the thermal management capabilities provided by the D2PAK package and the specified junction-to-case thermal resistance. Evaluate the gate charge parameters to ensure compatibility with available driver circuits for optimal switching performance.
Part Context
This IGBT belongs to a family of devices optimized for high-frequency operation in power conversion systems. It represents an evolution in IGBT technology aimed at reducing conduction and switching losses compared to previous generations. The component is engineered to provide cost-effective operation while maintaining robust performance in demanding power electronics environments.
Replacement Considerations
Consult official cross-reference guides for verified substitutes. Ensure any replacement matches the 600V voltage rating, D2PAK package dimensions, and thermal characteristics. Verify that alternative components meet the same switching loss and conduction voltage specifications for direct integration.
