IRG4BC30W-STRLP

Description：IGBT 600V 23A 100W D2PAK
Series：-

SKU:40690b8f677f Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 23A 100W D2PAK
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：23 A
Current - Collector Pulsed (Icm)：92 A
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 12A
Power - Max：100 W
Switching Energy：130µJ (on), 130µJ (off)
Input Type：Standard
Gate Charge：51 nC
Td (on/off) @ 25°C：25ns/99ns
Test Condition：480V, 12A, 23Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK
Grade：-
Qualification：-

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IRG4BC30W-STRLP

Overview

The IRG4BC30W-STRLP is a Generation 4 Insulated Gate Bipolar Transistor manufactured by Infineon Technologies. It features a D2PAK surface-mount package with a 600 V collector-to-emitter breakdown voltage and a continuous collector current of 23 A at 25°C case temperature. The device exhibits a typical saturation voltage of 2.10 V at 12 A and includes an internal emitter inductance of 7.5 nH. Designed for high-frequency operation, it supports switching frequencies up to 150 kHz in hard-switched modes and exceeds 300 kHz in resonant applications.

Feature Summary

Optimized for Switch-Mode Power Supply and PFC applications with industry-benchmark switching losses
Features a 50% reduction in turn-off energy compared to previous generations
Provides low conduction losses and tight parameter distribution for enhanced reliability
Supports efficient operation in single-ended converters and boost PFC topologies

Applications

Switch-Mode Power Supplies
Power Factor Correction (PFC) circuits
Single-ended converter topologies
Boost PFC topologies rated 150 W and higher

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and reel specifications. Confirm that the component meets RoHS compliance requirements for your assembly process. Check for any regional shipping restrictions or export control classifications before finalizing orders. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values.

Selection Notes

Select this component for designs requiring high efficiency in power conversion stages operating above 150 kHz. Consider the 600 V rating for standard mains-derived applications. Evaluate the gate charge characteristics for driver compatibility. Verify that the D2PAK footprint matches the PCB layout constraints and that adequate copper area is available for heat dissipation during continuous operation.

Part Context

This device belongs to the IRG4BC series of Generation 4 IGBTs from Infineon. It replaces older models such as the IRGBC30K and IRGBC30M. The series utilizes advanced silicon technology to deliver improved performance over previous iterations while maintaining cost-effectiveness for high-volume power supply manufacturing.