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The IRG4BC30WPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. It features a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 23A. The device is housed in a TO-220AB through-hole package. Key electrical parameters include a maximum power dissipation of 100W and a pulsed collector current capability of 92A. The typical on-state collector-emitter voltage is specified at 2.70V when measured at a gate-emitter voltage of 15V.
Verify the manufacturer designation as International Rectifier or Infineon Technologies, as the company was acquired. Confirm the specific suffix WPBF corresponds to the TO-220AB package and lead-free compliance. Ensure the datasheet version matches the required electrical characteristics, particularly the Vce(on) max values, before procurement.
Select this component for applications requiring a 600V blocking voltage and up to 23A continuous current. The TO-220AB package is suitable for through-hole mounting where moderate power dissipation is needed. Consider the 100W power dissipation limit and thermal management requirements for the specific operating environment.
This IGBT belongs to the IRG4BC series from International Rectifier. It serves as a replacement for older devices such as the IRGBC30K and IRGBC30M. The series represents a later generation design offering tighter parameter distribution and higher efficiency compared to previous iterations.
Public confirmed substitutes include the IRG4BC30 and IRG4BC30F. These parts share similar 600V specifications and are designed for comparable industrial applications.