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Product Detailed Parameters
- Description：IGBT 600V 40A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 20A
- Power - Max：160 W
- Switching Energy：320µJ (on), 350µJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：34ns/110ns
- Test Condition：480V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRG4BC40U is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features an N-channel configuration housed in an industry-standard TO-220AB flange mount package with three terminals. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 40 A at 25°C. Typical saturation voltage is 1.72 V at 15 V gate drive and 20 A collector current, while the gate threshold voltage is specified at 6 V under 250 uA conditions. Designed for ultrafast switching, it operates efficiently in hard switching applications between 8 kHz and 40 kHz.
Feature Summary
- UltraFast switching optimization enables high operating frequencies up to 40 kHz in hard switching and over 200 kHz in resonant mode.
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency compared to previous generations.
Applications
- High-frequency power conversion circuits
- Resonant mode power supplies
- Industrial motor drives
Procurement Notes
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm RoHS compliance status via official documentation. Check for obsolescence notices as availability may vary. Ensure storage conditions meet semiconductor handling standards to prevent moisture sensitivity damage prior to soldering.
Selection Notes
Select this component for applications requiring fast switching speeds within the 8-40 kHz range. The TO-220AB package facilitates easy mounting on heat sinks for thermal management. Consider the 600V rating for medium-voltage AC/DC conversion tasks. Evaluate thermal resistance requirements against the 160W power dissipation capability for your specific load profile.
Part Context
This discrete IGBT belongs to Infineon's Generation 4 UltraFast series, designed to replace older Generation 3 devices. It serves as a core switching element in power electronics, offering improved efficiency and reliability. The component is distinct from MOSFETs due to its bipolar conduction characteristics, suitable for higher voltage and current applications.
Replacement Considerations
Direct substitutes include other Generation 4 IGBTs with matching 600V ratings and TO-220AB packages. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with Infineon's replacement guide for equivalent performance metrics.
