IRG4BC40WPBF

Description：IGBT 600V 40A TO-220AB
Series：-

SKU:ec628fcfc0a3 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 40A TO-220AB
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
Power - Max：160 W
Switching Energy：110µJ (on), 230µJ (off)
Input Type：Standard
Gate Charge：98 nC
Td (on/off) @ 25°C：27ns/100ns
Test Condition：480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220AB
Grade：-
Qualification：-

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IRG4BC40WPBF

Overview

The IRG4BC40WPBF is a Generation 4 UltraFast Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. Designed for high-frequency switching applications, it features industry-benchmark switching losses and low conduction losses. The device utilizes an n-channel configuration with a collector-emitter voltage rating of 600V and a continuous collector current capacity of 40A. It is housed in a lead-free TO-220AB package suitable for through-hole mounting.

Feature Summary

Optimized for ultrafast switching performance in hard-switched and resonant mode applications
Generation 4 IGBT design providing tighter parameter distribution and higher efficiency
Significant reduction in turn-off energy loss compared to previous generations
Lead-free construction compliant with environmental standards

Applications

Switch-Mode Power Supply (SMPS) designs
Power Factor Correction (PFC) circuits
Single-ended converter topologies
Boost PFC topologies for power supplies 150W and higher

Procurement Notes

Verify the specific suffix WPBF indicates lead-free packaging and RoHS compliance when sourcing. Confirm the component status as discontinued or active through official Infineon channels prior to procurement. Ensure thermal management solutions align with the TO-220AB package specifications for reliable operation.

Selection Notes

Select this component for applications requiring high efficiency at switching frequencies up to 150 kHz in hard-switched modes. It serves as a cost-effective alternative to power MOSFETs in higher power topologies. Consider its low minority-carrier recombination characteristics for resonant mode operations exceeding 300 kHz.

Part Context

This discrete IGBT belongs to Infineon's UltraFast series, engineered specifically to address efficiency challenges in modern power conversion. The Generation 4 architecture represents an evolution in silicon technology, offering improved reliability and performance consistency over earlier iterations within the same voltage and current class.