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Product Detailed Parameters
- Description：IGBT 1200V 11A TO-262
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：11:00 AM
- Current - Collector Pulsed (Icm)：22 A
- Vce(on) (Max) @ Vge, Ic：4.3V @ 15V, 5A
- Power - Max：60 W
- Switching Energy：450µJ (on), 440µJ (off)
- Input Type：Standard
- Gate Charge：28 nC
- Td (on/off) @ 25°C：23ns/93ns
- Test Condition：960V, 5A, 50Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
- Supplier Device Package：TO-262
- Grade：-
- Qualification：-
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Overview
The IRG4BH20K-LPbF is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features an UltraFast 5 technology platform designed for high-frequency switching applications. The device integrates a monolithic ultrafast soft recovery anti-parallel diode, eliminating the need for external freewheeling diodes in half-bridge configurations. Packaged in a TO-262 (D2PAK) format, it provides robust thermal performance and mechanical stability suitable for industrial power conversion systems.
Feature Summary
- Integrates a monolithic ultrafast soft recovery anti-parallel diode to simplify circuit design
- Utilizes UltraFast 5 IGBT technology for optimized switching characteristics
- Features a rugged TO-262 package with low thermal impedance
Applications
- High-frequency motor drives
- Switched-mode power supplies (SMPS)
- Induction heating systems
Procurement Notes
Verify the component authenticity against official Infineon documentation before integration. Confirm that the specific ordering suffix matches the required package and lead-free specifications. Ensure the supply chain source is authorized to prevent counterfeit components. Cross-reference the datasheet revision date with your manufacturing timeline to guarantee parameter consistency.
Selection Notes
Select this component when designing circuits requiring integrated freewheeling capabilities without external diode losses. The TO-262 package is appropriate for applications needing surface-mount assembly with enhanced heat dissipation compared to standard SO-8 packages. Evaluate the thermal resistance requirements of your specific PCB layout to ensure the junction temperature remains within safe operating limits during continuous operation.
Part Context
This part belongs to the IRG4BH series of high-voltage IGBTs from Infineon's legacy International Rectifier portfolio. The series is characterized by its focus on high-speed switching and integrated diode solutions for compact power stages. It represents a transition point in Infineon's discrete IGBT offerings, bridging older technologies with newer UltraFast platforms.
Replacement Considerations
Consult the official Infineon replacement guide for direct equivalents. Verify pin compatibility and thermal characteristics if substituting with other TO-262 IGBTs.
