IRG4BH20K-S

$2.28

Description：IGBT 1200V 11A D2PAK
Series：-

SKU:0808644339a5 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 11A D2PAK
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：11:00 AM
Current - Collector Pulsed (Icm)：22 A
Vce(on) (Max) @ Vge, Ic：4.3V @ 15V, 5A
Power - Max：60 W
Switching Energy：450µJ (on), 440µJ (off)
Input Type：Standard
Gate Charge：28 nC
Td (on/off) @ 25°C：23ns/93ns
Test Condition：960V, 5A, 50Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK
Grade：-
Qualification：-

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IRG4BH20K-S

Overview

The Infineon IRG4BH20K-S is a single n-channel UltraFast IGBT in a D²Pak package. It features a collector-emitter voltage (VCES) of 1200V and a continuous collector current (IC) of 11A at 25°C case temperature. The typical saturation voltage (VCE(on)) is 3.17V at 5.0A and 15V gate drive. It supports a short circuit withstand time of 10µs at VCC=720V and TJ=125°C. Maximum power dissipation is 60W at 25°C, with an operating junction temperature range of -55°C to +150°C.

Feature Summary

High short circuit rating optimized for motor control applications
Combines low conduction losses with high switching speed
Latest generation design provides tighter parameter distribution and higher efficiency

Applications

Motor control systems
Power conversion circuits
Industrial motor drives

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free status and packaging type. Confirm that the component matches the exact datasheet version referenced. Ensure the supplier provides traceability documentation consistent with automotive or industrial quality standards required for this device class.

Selection Notes

Select this component when a 1200V rated IGBT with moderate current handling is required. Consider the thermal resistance characteristics for heatsink design. Evaluate the switching loss parameters relative to the target frequency and load conditions. Verify compatibility with standard gate drive voltages and requirements.

Part Context

This part belongs to the UltraFast IGBT family from Infineon Technologies. It utilizes insulated gate bipolar transistor technology designed for high-efficiency power switching. The D²Pak package provides a compact form factor suitable for surface mount assembly on printed circuit boards.