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Product Detailed Parameters
- Description：IGBT CHIP
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 6A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The IRG4CC30FB is a silicon IGBT die in wafer form, rated for 600V collector-emitter breakdown voltage. It features a nominal backmetal composition of Cr-Ni and V-Ag (1 kA-2kA-2.5kA) with a front metal layer of 99% Al and 1% Si (4 microns). The die dimensions are 0.141 inches by 0.164 inches. Electrical characteristics include a maximum collector-to-emitter saturation voltage of 1.7V at 6A and 25°C, and a gate threshold voltage range of 3.0V to 6.0V.
Feature Summary
- Wafer-form IGBT die designed for custom packaging applications
- Optimized for fast switching performance within the 600V class
- Standardized mechanical outline compatible with reference packaged parts
Applications
- Custom power module assembly
- High-frequency industrial motor drives
- Power supply unit manufacturing
Procurement Notes
Verify that the supplier provides the component strictly as bare die on a 6-inch wafer with a standard flat. Confirm the specific lot meets the recommended storage environment requirements, including dessicated nitrogen conditions. Ensure the ordering documentation explicitly identifies the part as wafer form rather than packaged discrete components.
Selection Notes
Select this component when designing custom power modules requiring a 600V IGBT die. The IRG4CC30FB serves as the bare die equivalent to the IRG4BC30F packaged part. Designers must account for the specific die attach temperature limits not exceeding 300°C and ensure proper thermal management for the 0.141 x 0.164 inch footprint.
Part Context
This component belongs to Infineon's (formerly International Rectifier) 600V IGBT family. It represents the wafer-level version of the IRG4BC30F discrete device. The product utilizes trench technology optimized for high-speed switching applications, providing a standardized building block for manufacturers creating proprietary power electronics assemblies.
Replacement Considerations
The IRG4BC30F is the direct packaged reference part for design purposes. Other dies from the same 600V series may be considered if electrical parameters match the application requirements.
