IRG4CC40FB

Description：IGBT CHIP
Series：-

SKU:9f60e562cf19 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT CHIP
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 10A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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IRG4CC40FB

Overview

The IRG4CC40FB is a 600 V, 40 A N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies. It features a TRENCHSTOP™ technology with emitter-controlled design for optimized switching performance. The device is housed in a TO-247AC package and supports a maximum junction temperature of 150 °C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V at rated current and a turn-off energy of 3.5 mJ at 600 V and 40 A. It is designed for hard-switched applications requiring high reliability.

Feature Summary

Emitter-controlled TRENCHSTOP™ IGBT technology for reduced switching losses
Optimized for hard-switched motor drive applications
High thermal stability with 150 °C junction temperature rating

Applications

Hard-switched motor drives
Industrial inverters
Switching power supplies

Procurement Notes

Verify the specific ordering suffix to ensure the correct package variant and tape/reel configuration match the design requirements. Confirm that the component meets all relevant automotive or industrial qualification standards required for the target application environment before finalizing procurement.

Selection Notes

Select this component for applications requiring robust hard-switching capabilities with moderate current ratings. Consider the trade-off between conduction loss and switching speed inherent to emitter-controlled designs. Ensure adequate gate drive circuitry is available to manage the specified turn-off energy characteristics effectively.

Part Context

This IGBT belongs to Infineon's TRENCHSTOP™ family, which combines trench gate technology with emitter control to enhance efficiency. It serves as a discrete solution for medium-power conversion tasks, offering a balance between cost-effectiveness and performance compared to more complex intelligent power modules.