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Product Detailed Parameters
- Description：IGBT CHIP
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 10A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The IRG4CC50WB is a bare IGBT die in wafer form, designed for integration into custom power modules. It features a 600 V collector-to-emitter breakdown voltage and a maximum saturation voltage of 2.3 V at 10 A. The device utilizes a Cr-NiV-Ag backmetal composition and a 99% Al/1% Si front metal layer. Mechanical dimensions are 0.257" x 0.260", with a minimum street width of 100 microns. Recommended storage requires dessicated nitrogen, and die attach temperatures should not exceed 300°C.
Feature Summary
- Wafer-form bare die construction for custom module integration
- High-voltage 600 V blocking capability
- Optimized metal compositions for thermal and electrical performance
Applications
- Custom power module manufacturing
- Industrial motor drive inverters
- Switch-mode power supplies
Procurement Notes
Verify the specific wafer lot requirements and mechanical tolerances against your module design specifications. Confirm that the recommended die attach temperature limit of 300°C aligns with your assembly process capabilities. Ensure storage conditions maintain dessicated nitrogen environments to prevent contamination before use.
Selection Notes
Select this component when designing custom power modules requiring a 600 V IGBT die. Compare the 2.3 V saturation voltage and gate threshold range against system efficiency targets. Ensure the physical dimensions fit within the intended substrate layout and that the wafer form factor meets production volume needs.
Part Context
This part belongs to the WARP Speed series of IGBT dies from Infineon Technologies (formerly International Rectifier). It serves as the semiconductor element for high-power applications, replacing packaged discrete devices in modular designs. The reference standard for design purposes is the IRG4PC50W packaged part.
Replacement Considerations
The IRG4PC50W is listed as the reference standard packaged part for design comparison. Direct replacement depends on whether the application requires a bare die or a packaged solution. Verify compatibility with existing module substrates and driver circuits.
