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Product Detailed Parameters
- Description：IGBT CHIP
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：27 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：33 ns
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The IRG4CC50WC is a Gen 4 IGBT discrete component manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 27 A. The device has a typical saturation voltage of 2.3 V, with a gate-emitter threshold voltage range from 3.0 V to 6.0 V. Switching characteristics include a turn-on time of 33 ns and a turn-off time of 57 ns. The operational temperature range spans from -55 °C to 150 °C.
Feature Summary
- Utilizes TRENCHSTOP™ technology for optimized switching performance
- Designed for high efficiency in industrial power applications
- Provides robust operation across extended temperature ranges
Applications
- Industrial motor drives
- Welding equipment
- Power supplies
Procurement Notes
Verify the exact ordering suffix against official Infineon documentation to confirm package type and specific electrical tolerances. Confirm RoHS compliance status through authorized distributors or manufacturer certificates before procurement. Ensure the component matches the required thermal management specifications for the target application environment.
Selection Notes
Select this component based on its 600 V blocking capability and 27 A current rating. Evaluate the 2.3 V saturation voltage against system conduction loss requirements. Consider the 33 ns turn-on and 57 ns turn-off times for compatibility with the intended switching frequency. Verify that the 150 °C maximum junction temperature aligns with the cooling design.
Part Context
This part belongs to the Gen 4 IGBT family from Infineon Technologies. It utilizes TRENCHSTOP™ technology, which combines trench gate and field-stop structures. This generation targets industrial applications requiring a balance between low conduction losses and fast switching speeds.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Direct replacements must match the 600 V rating, 27 A current capacity, and TO-247 package dimensions. Verify equivalent switching times and saturation voltages to maintain circuit performance.
