IRG4IBC10UDPBF

Overview

The IRG4IBC10UDPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a TO-220FP-3 through-hole package and utilizes Silicon technology. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 6.8 A at 25 °C. Key electrical parameters include a collector-emitter saturation voltage of 2.61 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 25 W. It operates within a temperature range of -55 °C to 125 °C.

Feature Summary

• Single IGBT configuration for discrete switching applications
• Ultrafast performance characteristics suitable for high-frequency operation
• Through-hole mounting in a TO-220FP-3 package

Applications

• High-frequency power conversion circuits
• Motor drive inverters
• Switching power supplies

Procurement Notes

This component is officially listed as obsolete or discontinued by the manufacturer. Availability is restricted, and distributors may not stock this item in all regions. Verify end-of-life status and last-time-buy dates with authorized suppliers before design finalization.

Selection Notes

Select this part for low-current, high-voltage switching tasks requiring through-hole assembly. Ensure thermal management accommodates the 25 W dissipation limit. Consider modern replacements if long-term supply assurance is required for new designs.

Part Context

Infineon's IGBT portfolio includes various fast and ultrafast variants designed for efficient power control. This specific model targets applications needing robust voltage handling with moderate current capacity in standard industrial packages.

Replacement Considerations

Verify pin-compatible alternatives from Infineon's current IGBT lineup. Check datasheets for matching Vceo, Ic, and package dimensions to ensure direct substitution without circuit redesign.