ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 14.3A TO220AB FP
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk,Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14.3 A
- Current - Collector Pulsed (Icm)：64 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 9A
- Power - Max：34 W
- Switching Energy：250µJ (on), 640µJ (off)
- Input Type：Standard
- Gate Charge：27 nC
- Td (on/off) @ 25°C：43ns/240ns
- Test Condition：480V, 9A, 50Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220AB Full-Pak
- Grade：-
- Qualification：-
Download product information
Overview
The IRG4IBC20FDPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features an integrated ultrafast soft recovery diode and is housed in a TO-220FP package for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 14.3 A at 25°C. Key electrical parameters include a maximum power dissipation of 34 W, a saturation voltage of 2 V at 9 A, and switching times of 43 ns (turn-on) and 240 ns (turn-off). The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Integrates an ultrafast soft recovery diode with the IGBT chip for efficient commutation.
- Designed for high-speed switching applications with optimized turn-on and turn-off characteristics.
- Utilizes a robust TO-220FP surface-mount compatible package for thermal management.
Applications
- High-frequency inverters
- Switch-mode power supplies
- Motor control circuits
Procurement Notes
Verify the exact suffix configuration against official datasheets, as variations may exist between IRG4IBC20FD and IRG4IBC20FDPBF regarding lead-free compliance. Confirm RoHS status and end-of-life notifications directly with the manufacturer or authorized distributors before procurement planning.
Selection Notes
Select this component for designs requiring a 600V rating with moderate current handling up to 14.3A. Ensure the application frequency aligns with the specified switching times. Verify that the thermal resistance of the TO-220FP package meets the system's heat dissipation requirements under expected load conditions.
Part Context
This part belongs to Infineon's discrete IGBT portfolio, specifically designed for general-purpose power switching. It combines the fast switching capabilities of an IGBT with the freewheeling function of a diode in a single package, simplifying circuit design for half-bridge configurations.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Consult official replacement guides for cross-referencing with newer generations of IGBT modules.
