IRG4IBC20UDPBF

Overview

The IRG4IBC20UDPBF is an Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. It features a soft recovery ultrafast diode integrated in the same package. The device is designed for high-efficiency power switching applications, offering improved gate, avalanche, and dynamic dV/dt ruggedness. It is housed in a lead-free TO-220FPAB package, suitable for through-hole mounting. Key electrical characteristics include a collector-emitter voltage rating of 600 V and a continuous collector current of 20 A at 25°C. The typical on-state voltage drop is 1.95 V, with a maximum switching frequency capability up to 8 kHz.

Feature Summary

• Integrated ultrafast soft recovery diode for enhanced circuit performance
• Improved gate, avalanche, and dynamic dV/dt ruggedness
• Fully characterized capacitance and avalanche SOA
• Lead-free TO-220FPAB package for reliable thermal management

Applications

• High efficiency synchronous rectification in Switch Mode Power Supplies (SMPS)
• Uninterruptible Power Supply (UPS) systems
• High speed power switching circuits
• Hard switched and high frequency circuits

Procurement Notes

Verify the manufacturer marking and date code against official Infineon or International Rectifier distribution channels. Ensure the component matches the TO-220FPAB physical dimensions and pinout configuration. Request original datasheets to confirm RoHS compliance and specific parameter tolerances before integration into production designs.

Selection Notes

Select this IGBT for applications requiring 600V blocking capability and moderate current handling up to 20A. Consider the integrated diode's reverse recovery characteristics when designing snubber circuits or freewheeling paths. Evaluate thermal resistance requirements based on the expected duty cycle and ambient temperature conditions to ensure junction temperature remains within safe operating limits.

Part Context

This component belongs to the IRG4BC/IRG4IBC series of IGBTs from International Rectifier. These devices are engineered for general-purpose power switching, balancing low conduction losses with robust switching performance. The 'UDPBF' suffix typically denotes the specific package type and lead-free status within the product family.

Replacement Considerations

Direct substitutes may include other 600V, 20A IGBTs with integrated fast recovery diodes in TO-220FP packages. Verify pin compatibility and thermal characteristics when cross-referencing with similar models from Infineon or other manufacturers. Ensure that the replacement device meets or exceeds the required dV/dt ruggedness and avalanche energy ratings.