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Product Detailed Parameters
- Description：IGBT 600V 17A TO220AB FP
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：17 A
- Current - Collector Pulsed (Icm)：34 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 16A
- Power - Max：45 W
- Switching Energy：600µJ (on), 580µJ (off)
- Input Type：Standard
- Gate Charge：67 nC
- Td (on/off) @ 25°C：60ns/160ns
- Test Condition：480V, 16A, 23Ohm, 15V
- Reverse Recovery Time (trr)：42 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220AB Full-Pak
- Grade：-
- Qualification：-
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Overview
The IRG4IBC30KDPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter maximum voltage of 600 V and a continuous collector current of 30 A at 25 °C. The device utilizes a TO-220FP-3 package for through-hole mounting. Key electrical parameters include a collector-emitter saturation voltage of 2.61 V and a power dissipation rating of 25 W. The component operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Integrates an ultrafast soft recovery diode with the IGBT switch
- Designed for high-frequency switching applications up to 80 kHz
- Provides isolated flange mount construction for thermal management
Applications
- High-frequency motor drives
- Switching power supplies
- Uninterruptible power systems
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for end-of-life notices, as availability may be limited. Ensure storage conditions meet semiconductor handling standards to prevent damage prior to installation.
Selection Notes
Select this component for circuits requiring fast reverse recovery characteristics in medium-power applications. Evaluate thermal resistance requirements against the 25 W dissipation limit. Compare saturation voltage and switching speed against alternative IGBTs to ensure compatibility with the target system's efficiency goals.
Part Context
This part belongs to Infineon's IGBT discrete transistor portfolio, specifically designed for power conversion tasks. It represents a legacy product line from International Rectifier, now integrated into Infineon's offerings. The device serves as a fundamental switching element in various industrial and consumer power electronics designs.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings when considering generic replacements from other manufacturers.
