IRG4IBC30SPBF

Overview

The IRG4IBC30SPBF is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-to-emitter breakdown voltage of 600 V and a continuous collector current of 23.5 A at 25°C case temperature. The device is housed in a TO-220AB Full-Pak through-hole package with a maximum power dissipation of 45 W. It operates within a temperature range of -55°C to +150°C and supports switching frequencies up to 1 kHz.

Feature Summary

• Single IGBT configuration for discrete switching applications
• Robust thermal management via TO-220AB Full-Pak package
• Designed for low-frequency operation up to 1 kHz

Applications

• Industrial motor drives
• Power supply inverters
• Welding equipment

Procurement Notes

This component is officially classified as obsolete or end-of-life by the manufacturer. Availability is restricted to third-party distributors holding existing stock. Verify authenticity and lot dates carefully when sourcing from secondary markets, as direct manufacturing support is no longer active.

Selection Notes

Select this part for high-current, low-frequency applications requiring 600V blocking capability. The TO-220AB package facilitates simple mounting but requires adequate heatsinking due to 45W dissipation limits. Ensure gate drive voltages remain within specified ranges to prevent damage.

Part Context

Part of Infineon's IRG4 series of IGBTs, designed for general-purpose industrial power electronics. The 'SP' suffix typically denotes specific packaging or tape-and-reel variations, though this specific model utilizes a standard through-hole leaded package suitable for manual or wave soldering processes.

Replacement Considerations

As an obsolete component, direct substitutes are unavailable. Consider modern equivalents from the same manufacturer's updated portfolios that offer improved switching characteristics and availability, ensuring pin compatibility and electrical ratings match the original design requirements.