IRG4IBC30WPBF

Description：IGBT 600V 17A TO220AB FP
Series：-

SKU:23829686c3ed Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 17A TO220AB FP
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：17 A
Current - Collector Pulsed (Icm)：92 A
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 12A
Power - Max：45 W
Switching Energy：130µJ (on), 130µJ (off)
Input Type：Standard
Gate Charge：51 nC
Td (on/off) @ 25°C：25ns/99ns
Test Condition：480V, 12A, 23Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-220AB Full-Pak
Grade：-
Qualification：-

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IRG4IBC30WPBF

Overview

The IRG4IBC30WPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-to-emitter breakdown voltage of 600 V and an industry-standard isolated TO-220 Fullpak outline. The device supports a continuous collector current of 17 A at a case temperature of 25°C, with a maximum power dissipation of 45 W under the same conditions. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed expressly for Switch-Mode Power Supply and PFC applications
Industry-benchmark switching losses improve efficiency of all power supply topologies
Latest-generation IGBT design offers tighter parameter distribution and exceptional reliability

Applications

Switch-Mode Power Supplies
Power Factor Correction (PFC)
Single-ended converters
Boost PFC topologies

Procurement Notes

Verify component authenticity through authorized channels. Confirm datasheet version matches the specific manufacturing lot. Check for lead-free compliance markings on the package body. Ensure thermal interface materials are compatible with the TO-220 Fullpak mounting requirements.

Selection Notes

Select this component for high-frequency hard-switched applications up to 150 kHz where lower switching losses provide cost-effective operation compared to power MOSFETs. Consider its suitability for resonant mode switching above 300 kHz due to low conduction losses and minimal minority-carrier recombination characteristics.

Part Context

This discrete IGBT belongs to Infineon's Generation 4 product line, utilizing advanced trench and fieldstop technology. It replaces older generations by offering significantly reduced Eoff parameters and improved efficiency across various power supply topologies while maintaining standard mechanical outlines for easy integration.