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The IRG4PC30KDPBF is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a TO-247-3 through-hole package designed for high-power applications. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 30 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.1 V, a gate-emitter voltage range of -20 V to 20 V, and a power dissipation rating of 180 W. It operates within a temperature range of -55°C to +150°C junction temperature.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific ordering suffix matches the required variant. Check for obsolescence status as this model may be discontinued. Request official datasheets and qualification reports to ensure compliance with application requirements. Validate packaging integrity upon receipt to prevent damage during handling.
Select this component for applications requiring 600V blocking capability and 30A continuous current in a through-hole format. Ensure the thermal management system can handle 180W dissipation. Verify that the switching frequency requirements align with the 8-25kHz ultrafast specification. Consider the TO-247-3 footprint constraints for PCB layout. Evaluate gate drive compatibility with the specified voltage limits.
This IGBT belongs to Infineon's IRG4 series, which focuses on ultrafast switching performance for industrial power electronics. The TO-247-3 package is standard for medium-to-high power discrete devices, offering reliable soldering and heat sinking options. It complements other single IGBTs in the portfolio designed for hard-switching applications.
Public confirmed substitute part numbers: IKW25N120H3XK.