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Product Detailed Parameters
- Description：IGBT 600V 34A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：34 A
- Current - Collector Pulsed (Icm)：68 A
- Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 18A
- Power - Max：100 W
- Switching Energy：260µJ (on), 3.45mJ (off)
- Input Type：Standard
- Gate Charge：50 nC
- Td (on/off) @ 25°C：22ns/540ns
- Test Condition：480V, 18A, 23Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRG4PC30SPbF is a Generation 2 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TO-247A package for through-hole mounting. The device features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current of 30 A at 25 °C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.95 V, a maximum gate-emitter leakage current of 100 nA, and a total power dissipation capacity of 100 W. It operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Optimized for minimum saturation voltage and low operating frequencies
- Generation 2 IGBT design providing tighter parameter distribution and higher efficiency than Generation 1
- Industry standard TO-247A packaging
- Designed for specific application conditions
Applications
- Motor drives
- Switched-mode power supplies
- High frequency inverters
Procurement Notes
Verify the exact part number suffix against official manufacturer documentation to confirm lead-free status and specific manufacturing lot details. Confirm that the component meets RoHS requirements as specified in the datasheet. Ensure the procurement channel provides valid traceability for this discrete semiconductor component.
Selection Notes
Select this component based on its 600 V rating and 30 A continuous current capability. Consider the thermal resistance characteristics and the TO-247A package form factor for your heat sinking strategy. Evaluate the saturation voltage and switching losses relative to your specific frequency and load requirements.
Part Context
This component belongs to the IRG4 series of Generation 2 IGBTs from Infineon Technologies. It is designed as a discrete power switch suitable for medium-power applications requiring robust performance and industry-standard mechanical dimensions.
Replacement Considerations
Consult official cross-reference tools or manufacturer documentation for verified substitute part numbers. Do not assume functional equivalence with other IGBT models without verifying pinout, voltage ratings, and thermal specifications.
