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The IRG4PC30UPbF is a lead-free UltraFast Speed Insulated Gate Bipolar Transistor (IGBT) utilizing optimized field-stop technology for high efficiency. It features a TO-247AC package with an isolated collector tab. Key electrical parameters include a maximum Collector-Emitter Breakdown Voltage of 600 V, a continuous Collector Current of 30 A at 25°C, and a typical Total Gate Charge of 56.9 nC. The device offers low switching losses and robust short-circuit capability.
Verify the specific ordering suffix to confirm lead-free status and packaging type. Ensure the component matches the exact Infineon or International Rectifier part number required for your design. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement.
Select this IGBT for applications requiring fast switching speeds and high efficiency. Consider the thermal resistance and safe operating area when designing heat sinks. Verify gate drive requirements against the specified total gate charge and threshold voltage limits.
This component belongs to the UltraFast Speed IGBT family from Infineon Technologies (formerly International Rectifier). It is designed for medium-power applications where fast switching and low conduction losses are critical. The TO-247AC package provides a reliable solution for industrial power electronics.
Check pinout compatibility and electrical ratings against existing designs. Verify thermal performance and switching characteristics match system requirements. Confirm availability of equivalent parts if discontinuation occurs.