IRG4PC30UDPBF

Description：IGBT 600V 23A TO-247AC
Series：-

SKU:3ed1364c9597 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 23A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：23 A
Current - Collector Pulsed (Icm)：92 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 12A
Power - Max：100 W
Switching Energy：380µJ (on), 160µJ (off)
Input Type：Standard
Gate Charge：50 nC
Td (on/off) @ 25°C：40ns/91ns
Test Condition：480V, 12A, 23Ohm, 15V
Reverse Recovery Time (trr)：42 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC
Grade：-
Qualification：-

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IRG4PC30UDPBF

Overview

The IRG4PC30UDPBF is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a 600V collector-emitter breakdown voltage and a continuous collector current of 23A at 25°C. The device utilizes an industry-standard TO-247AC package for through-hole mounting. It is co-packaged with a HEXFRED ultrafast, ultra-soft-recovery anti-parallel diode. Key electrical parameters include a typical collector-emitter saturation voltage of 1.95V at 15V gate drive and 12A collector current, and a gate threshold voltage of 6V.

Feature Summary

Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations.
Co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes suitable for bridge configurations.
Optimized for high operating frequencies, supporting 8-40 kHz in hard switching and over 200 kHz in resonant mode.

Applications

High-frequency power conversion circuits
Resonant mode power supplies
Bridge configurations requiring integrated freewheeling diodes

Procurement Notes

Verify the specific manufacturing date code and lot traceability upon receipt, as component specifications may vary slightly between production batches. Confirm that the TO-247AC package dimensions match your PCB footprint requirements exactly. Ensure thermal management solutions are adequate for the specified power dissipation levels under actual operating conditions.

Selection Notes

Select this component when designing circuits requiring high efficiency and tight parameter consistency at 600V ratings. The integrated HEXFRED diode simplifies design for applications needing fast recovery characteristics. Consider the TO-247AC package for robust mechanical mounting and heat dissipation needs in medium-power applications.

Part Context

This part belongs to Infineon's UltraFast CoPack series, combining Generation 4 IGBT technology with advanced diode performance. It represents an evolution from Generation 3 devices, offering improved efficiency and parameter control. The TO-247AC package is an industry standard for high-power discrete semiconductors, facilitating widespread adoption in industrial and consumer power electronics.