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The IRG4PC30UPbF is an UltraFast Speed Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes OptiMOS technology for high operating frequencies up to 40 kHz in hard switching and 200 kHz in resonant mode. The device features a standard TO-247AC package with a single configuration, offering a maximum collector-emitter voltage of 600 V and a continuous collector current of 30 A at 25°C. Key electrical parameters include a saturation voltage of 1.84 V at 30 A, a typical gate charge of 56 nC, and total switching losses of 0.9 mJ. Thermal resistance from junction to case is 1.0 K/W, supporting power dissipation up to 100 W.
Verify the component status before procurement, as availability may be limited or subject to change. Confirm that the ordering suffix matches the required lead-free specifications. Ensure compatibility with existing thermal management solutions given the package constraints. Cross-reference datasheet revisions to validate parameter consistency against your design requirements.
Select this component for applications requiring fast switching speeds and low conduction losses. Consider the thermal resistance values when designing heat sinks for high-power scenarios. Evaluate the gate charge characteristics to optimize driver circuitry for efficient switching transitions. Verify that the voltage and current ratings exceed the peak operational demands of the target system.
This IGBT belongs to the UltraFast Speed series, engineered for superior performance in demanding power electronics environments. It represents a balance between low on-state voltage and rapid switching capabilities, making it suitable for modern inverter topologies. The TO-247AC packaging facilitates effective thermal dissipation while maintaining mechanical stability in industrial assemblies.
IRG4BC30SPBF
The device supports high operating frequencies up to 40 kHz in hard switching applications and up to 200 kHz in resonant mode.
Yes, it features an integrated fast body diode that provides high efficiency, functioning effectively as an ideal diode.
The thermal resistance from junction to case is specified as 1.0 K/W.