IRG4PC40FD

IRG4PC40FD

$2.92
  • Description:IGBT 600V 49A TO-247AC
  • Series:-

SKU:9f34b4597477 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 600V 49A TO-247AC
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bag
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):49 A
  • Current - Collector Pulsed (Icm):200 A
  • Vce(on) (Max) @ Vge, Ic:1.7V @ 15V, 27A
  • Power - Max:160 W
  • Switching Energy:950µJ (on), 2.01mJ (off)
  • Input Type:Standard
  • Gate Charge:100 nC
  • Td (on/off) @ 25°C:63ns/230ns
  • Test Condition:480V, 27A, 10Ohm, 15V
  • Reverse Recovery Time (trr):42 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AC
  • Grade:-
  • Qualification:-

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IRG4PC40FD

Overview

The IRG4PC40FD is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, housed in an industry-standard TO-247AC package. It integrates an ultrafast soft-recovery anti-parallel diode, optimized for medium operating frequencies up to 5 kHz in hard switching and above 20 kHz in resonant modes. The device features a maximum collector-emitter voltage of 600 V and a typical saturation voltage of 1.50 V at 15 V gate drive and 27 A collector current.

Feature Summary

  • Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations.
  • Co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes suitable for bridge configurations.
  • Minimized recovery characteristics that reduce or eliminate the need for snubbing circuits.

Applications

  • Medium frequency power conversion systems
  • Resonant mode switching applications
  • Bridge configurations requiring integrated freewheeling

Procurement Notes

Verify component authenticity through authorized channels due to potential counterfeits. Confirm RoHS compliance status as older manufacturing runs may differ from current specifications. Check datasheet revisions for any updates to thermal or electrical limits before finalizing designs.

Selection Notes

Select this component for applications requiring high efficiency in the 1-5 kHz range. Ensure gate drive conditions match the 15 V specification for optimal saturation voltage. Consider thermal management requirements associated with the TO-247AC package for continuous operation.

Part Context

This part belongs to Infineon's Generation 4 IGBT family, designed to replace equivalent industry-standard Generation 3 devices. It represents a transition toward higher power density and improved switching performance within the 600 V voltage class.

Replacement Considerations

Designed as a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs. Verify pinout compatibility and thermal resistance values when substituting with other manufacturers' parts.

FAQ

What is the typical saturation voltage for the IRG4PC40FD?

The typical saturation voltage is 1.50 V at a gate-emitter voltage of 15 V and a collector current of 27 A.

Is the IRG4PC40FD suitable for resonant mode applications?

Yes, it is optimized for resonant mode operation at frequencies greater than 20 kHz.

Does the IRG4PC40FD include an integrated diode?

Yes, it is co-packaged with a HEXFRED ultrafast, ultra-soft-recovery anti-parallel diode.

IRG4PC40FDIRG4PC40FD
$2.92
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