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The IRG4PC40FD is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, housed in an industry-standard TO-247AC package. It integrates an ultrafast soft-recovery anti-parallel diode, optimized for medium operating frequencies up to 5 kHz in hard switching and above 20 kHz in resonant modes. The device features a maximum collector-emitter voltage of 600 V and a typical saturation voltage of 1.50 V at 15 V gate drive and 27 A collector current.
Verify component authenticity through authorized channels due to potential counterfeits. Confirm RoHS compliance status as older manufacturing runs may differ from current specifications. Check datasheet revisions for any updates to thermal or electrical limits before finalizing designs.
Select this component for applications requiring high efficiency in the 1-5 kHz range. Ensure gate drive conditions match the 15 V specification for optimal saturation voltage. Consider thermal management requirements associated with the TO-247AC package for continuous operation.
This part belongs to Infineon's Generation 4 IGBT family, designed to replace equivalent industry-standard Generation 3 devices. It represents a transition toward higher power density and improved switching performance within the 600 V voltage class.
Designed as a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs. Verify pinout compatibility and thermal resistance values when substituting with other manufacturers' parts.
The typical saturation voltage is 1.50 V at a gate-emitter voltage of 15 V and a collector current of 27 A.
Yes, it is optimized for resonant mode operation at frequencies greater than 20 kHz.
Yes, it is co-packaged with a HEXFRED ultrafast, ultra-soft-recovery anti-parallel diode.