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Product Detailed Parameters
- Description：IGBT 600V 42A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Bag
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：42 A
- Current - Collector Pulsed (Icm)：84 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 25A
- Power - Max：160 W
- Switching Energy：620µJ (on), 330µJ (off)
- Input Type：Standard
- Gate Charge：120 nC
- Td (on/off) @ 25°C：30ns/140ns
- Test Condition：480V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRG4PC40KPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TO-247-3 through-hole package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 42 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.6 V, a power dissipation rating of 160 W, and a gate-emitter voltage range of -20 V to +20 V. It operates within a temperature range of -55°C to +175°C junction temperature.
Feature Summary
- Designed for ultra-fast switching applications operating between 8 kHz and 25 kHz.
- Single configuration IGBT optimized for high-efficiency power conversion.
- Robust thermal performance with a 160 W power dissipation capability in a TO-247-3 package.
Applications
- High-frequency motor drive inverters
- Switch-mode power supplies (SMPS)
- Induction heating systems
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels due to the part's discontinued status. Confirm RoHS compliance details via official documentation before integration. Ensure storage conditions meet semiconductor handling standards to prevent degradation. Cross-reference datasheet revisions to guarantee parameter consistency with design requirements.
Selection Notes
Select this component for designs requiring 600V blocking capability with moderate current handling up to 42A. The TO-247-3 package facilitates efficient heat sinking for high-power density applications. Consider the 2.6V saturation voltage for conduction loss calculations. Evaluate thermal resistance characteristics against the specific heatsink and airflow constraints of the target enclosure.
Part Context
This IGBT belongs to Infineon’s legacy UltraFast series, engineered for medium-power switching applications. The TO-247-3 package provides a standard footprint for industrial power electronics. As a discontinued product, it remains prevalent in existing maintenance and replacement scenarios for established equipment designs utilizing 600V silicon IGBTs.
Replacement Considerations
Consult official Infineon substitution guides for verified equivalents. Potential replacements may include newer generations from the same family or compatible devices with matching voltage, current, and package specifications. Verify pinout compatibility and thermal characteristics before implementation.
