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The IRG4PC40UD-EPBF is a Generation 4 N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a TO-247-3 through-hole package and is rated for a collector-emitter voltage of 600 V with a continuous collector current of 40 A at 25°C. The device exhibits an ultra-fast switching characteristic, optimized for hard switching frequencies between 8 kHz and 40 kHz. Key electrical parameters include a maximum power dissipation of 160 W, a typical saturation voltage of 1.72 V at 15 V gate drive and 20 A collector current, and a reverse recovery time of 42 ns.
Verify the specific suffix 'EPBF' against official Infineon documentation to confirm environmental compliance status and exact manufacturing lot specifications. Ensure that the component matches the required pinout and thermal characteristics for the target PCB footprint. Cross-reference the datasheet revision date to confirm the validity of the electrical parameters provided.
Select this component for applications requiring robust performance in hard-switching environments up to 40 kHz. The Generation 4 architecture offers improved efficiency compared to previous generations. Consider the 600 V rating and 40 A current capacity when designing circuits for industrial power conversion. Evaluate the thermal resistance requirements based on the TO-247-3 package constraints.
This IGBT belongs to Infineon's Generation 4 UltraFast series, designed to replace older models like the IRG4PC40U. It shares the same form factor as other TO-247-3 devices but offers enhanced switching speed and lower conduction losses. The product line focuses on balancing switching frequency capabilities with low saturation voltage for efficient power control.
Public confirmed substitute part numbers: IRG4PC40UDPBF, IRG4PC40KDPBF.