IRG4PC40UDPBF

Description：IGBT 600V 40A TO-247AC
Series：-

SKU:67bd2bd542d4 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 40A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 20A
Power - Max：160 W
Switching Energy：710µJ (on), 350µJ (off)
Input Type：Standard
Gate Charge：100 nC
Td (on/off) @ 25°C：54ns/110ns
Test Condition：480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)：42 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC
Grade：-
Qualification：-

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IRG4PC40UDPBF

Overview

The IRG4PC40UDPBF is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features an integrated ultrafast soft recovery anti-parallel diode, optimized for high-frequency hard switching applications between 8 kHz and 60 kHz. The device utilizes a TO-247AC through-hole package with a collector-connected tab for efficient thermal management. Key electrical specifications include a maximum collector-emitter voltage of 600 V, a continuous collector current of 40 A, and a typical saturation voltage of 2.4 V at 15 V gate drive and 20 A collector current. The unit supports a power dissipation of 160 W and operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

Integrated ultrafast soft recovery diode for resonant and hard-switching topologies
Generation 4 IGBT design ensuring tight parameter distribution and high efficiency
Optimized for high operating frequencies up to 60 kHz in hard switching

Applications

High-frequency AC motor drives
Resonant mode power supplies
Induction heating systems

Procurement Notes

Verify the specific suffix 'UDPBF' to confirm the inclusion of the integrated ultrafast diode and RoHS compliance. Cross-reference the datasheet revision date to ensure alignment with current manufacturing standards. Confirm that the TO-247AC package dimensions match the target PCB footprint and thermal interface requirements before finalizing procurement.

Selection Notes

Select this component when application requirements demand high switching speeds combined with low conduction losses in a single discrete package. The integrated diode eliminates the need for external parallel components, simplifying circuit design. Ensure the gate drive voltage supports the 15 V specification to achieve the rated 2.4 V saturation voltage and optimal performance characteristics.

Part Context

This part belongs to Infineon's UltraFast series of Generation 4 IGBTs, designed to replace older Generation 3 devices. It offers improved efficiency and tighter parameter tolerances compared to previous iterations. The TO-247AC form factor provides industry-standard mounting compatibility while delivering robust thermal performance for medium-power industrial electronics.