IRG4PC50FD-EPBF

Description：IGBT 600V 70A TO-247AC
Series：-

SKU:ebb219e3b3d1 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 70A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：70 A
Current - Collector Pulsed (Icm)：280 A
Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 39A
Power - Max：200 W
Switching Energy：1.5mJ (on), 2.4mJ (off)
Input Type：Standard
Gate Charge：190 nC
Td (on/off) @ 25°C：55ns/240ns
Test Condition：480V, 39A, 5Ohm, 15V
Reverse Recovery Time (trr)：50 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC
Grade：-
Qualification：-

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IRG4PC50FD-EPBF

Overview

The IRG4PC50FD-EPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a typical collector-emitter saturation voltage of 1.45 V at a gate-emitter voltage of 15 V and a collector current of 39 A. The device integrates an ultrafast soft recovery diode and is housed in a TO-247AC package with three pins for through-hole mounting.

Feature Summary

Integrates an ultrafast soft recovery diode for efficient commutation
Designed for high-speed switching applications up to 8-60 kHz
Utilizes planar trench gate technology for low conduction losses

Applications

Motor drives and inverters
Switched-mode power supplies (SMPS)
High-frequency welding equipment

Procurement Notes

Verify the specific suffix 'EPBF' against the manufacturer's latest documentation to confirm lead-free compliance and RoHS status. Ensure the ordering part number matches the exact electrical characteristics required, as minor suffix variations may indicate different thermal or packaging specifications. Cross-reference the datasheet revision date to ensure compatibility with current design standards.

Selection Notes

Select this component for designs requiring a balance between low conduction loss and fast switching speeds. The integrated ultrafast diode simplifies circuit topology by eliminating the need for external freewheeling diodes in certain configurations. Consider the thermal resistance and package constraints when designing heat dissipation solutions for continuous operation.

Part Context

This IGBT belongs to the IRG4PC series, which utilizes Infineon's planar trench gate technology. This technology family is engineered to provide superior performance in terms of switching speed and conduction efficiency compared to older planar technologies, making it suitable for modern high-efficiency power conversion systems.