IRG4PC50KDPBF

Description：IGBT 600V 52A TO-247AC
Series：-

SKU:81b2501646ba Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 52A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：52 A
Current - Collector Pulsed (Icm)：104 A
Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 30A
Power - Max：200 W
Switching Energy：1.61mJ (on), 840µJ (off)
Input Type：Standard
Gate Charge：200 nC
Td (on/off) @ 25°C：63ns/150ns
Test Condition：480V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)：50 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC
Grade：-
Qualification：-

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IRG4PC50KDPBF

Overview

The IRG4PC50KDPbF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, housed in a TO-247AC through-hole package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 50 A at 25°C. The device has a typical collector-emitter saturation voltage of 2.2 V and a power dissipation rating of 200 W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

UltraFast switching technology optimized for high-frequency hard-switching applications up to 8–25 kHz.
Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations.
Lead-free construction compliant with RoHS standards.

Applications

High-frequency motor drives
Switch-mode power supplies
DC-to-AC inverters

Procurement Notes

Verify the specific ordering suffix 'KDPbF' against official Infineon documentation to confirm lead-free status and exact electrical tolerances. Ensure the TO-247AC package dimensions match your thermal management requirements. Confirm availability as this component may be subject to lifecycle changes or discontinuation notices.

Selection Notes

Select this component when a 600 V IGBT with 50 A continuous current capability is required for high-efficiency switching. The UltraFast characteristic makes it suitable for frequencies exceeding standard IGBT limits. Verify that the gate drive circuitry supports the specified ±20 V maximum gate-emitter voltage.

Part Context

This part belongs to the IRG4PCxx series of Generation 4 IGBTs from Infineon. It is designed to replace older generation devices like the IRG4PC50FDPBF in applications requiring improved switching performance and tighter parameter control. The TO-247AC package provides robust mechanical stability for industrial environments.

Replacement Considerations

The IRG4PC50FDPBF is a documented alternative within the same product family. Verify pinout compatibility and ensure the replacement meets the specific thermal and electrical requirements of the original design.