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The IRG4PC50KPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, formerly International Rectifier. It utilizes silicon technology and is housed in a TO-247-3 through-hole package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 52 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.2 V, a gate-emitter voltage range of -20 V to 20 V, and a power dissipation rating of 200 W. It operates within a temperature range of -55°C to +150°C.
Verify component authenticity through authorized distributors or direct manufacturer channels due to the presence of counterfeit risks in the market. Confirm RoHS compliance status and check for specific ordering suffixes that may indicate packaging variations. Ensure the supplier provides valid traceability documentation matching the Infineon part number SP001545724.
Select this component when a 600 V IGBT with integrated anti-parallel diode is required for medium-power switching applications. Compare the 52 A continuous current rating against load requirements and ensure the TO-247-3 package fits the thermal management design. Consider the 2.2 V saturation voltage for conduction loss calculations in the target circuit topology.
This part belongs to the IRG4PC series of UltraFast IGBTs from Infineon. It represents a transition product from the International Rectifier brand following the company's acquisition. The KPBF suffix typically denotes lead-free and RoHS-compliant packaging standards consistent with modern environmental regulations.
Direct cross-replacement requires verifying pinout compatibility and electrical parameter equivalence. Review datasheets for alternative 600 V TO-247-3 IGBTs with similar current ratings and integrated diodes. Validate thermal resistance values and switching speeds to ensure circuit stability without redesigning the gate drive network.
The IRG4PC50KPBF is designed for ultrafast switching applications operating between 8 kHz and 25 kHz.
Yes, it features an integrated ultrafast soft recovery diode.
The maximum operating temperature is specified as +150°C.