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Product Detailed Parameters
- Description：IGBT 600V 55A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Bag
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：55 A
- Current - Collector Pulsed (Icm)：220 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 27A
- Power - Max：200 W
- Switching Energy：120µJ (on), 540µJ (off)
- Input Type：Standard
- Gate Charge：180 nC
- Td (on/off) @ 25°C：32ns/170ns
- Test Condition：480V, 27A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRG4PC50U is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 52 A at 25 °C. The device utilizes the UltraFast technology, supporting switching frequencies between 8 kHz and 25 kHz. It is housed in a TO-247-3 package with a through-hole mounting style. Key electrical parameters include a collector-emitter saturation voltage of 2.2 V and a maximum gate-emitter voltage of ±20 V. The component operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Integrates UltraFast soft recovery diode for efficient commutation
- Designed for high power density applications
- Features robust short-circuit capability
Applications
- Motor drives
- Uninterruptible power supplies
- High-frequency inverters
Procurement Notes
Verify the exact suffix against official datasheets, as variations like KPBF or UD-EPBF indicate different performance characteristics such as switching speed or automotive qualification. Confirm RoHS compliance status and ensure the specific ordering code matches the required thermal and electrical specifications for your design.
Selection Notes
Select this component based on its 600 V rating and 52 A current capacity suitable for medium-power industrial applications. Consider the TO-247-3 package for ease of heatsinking and the UltraFast diode characteristics for inductive load switching. Ensure the gate drive circuitry supports the specified voltage limits and thermal management meets the junction temperature requirements.
Part Context
This IGBT belongs to Infineon's UltraFast series, designed for high-efficiency power conversion. The TO-247-3 package provides a balance of current handling and thermal performance. It is part of a broader family of discrete power semiconductors used in various industrial and consumer electronics applications requiring reliable switching.
Replacement Considerations
Direct replacements may include IRG4PC50KPBF or IRG4PC50UD-EPBF, depending on specific frequency and qualification needs. Verify pinout compatibility and thermal resistance values before substitution.
